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| FDZ2553N February 2003 FDZ2553N Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Combining Fairchild's advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2553N minimizes both PCB space and RDS(ON). This Monolithic Common Drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). Features * 9.6 A, 20 V. RDS(ON) = 14 m @ VGS = 4.5 V RDS(ON) = 20 m @ VGS = 2.5 V * Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8. * Ultra-thin package: less than 0.80 mm height when mounted to PCB. * Outstanding thermal transfer characteristics: significantly better than SO-8. * Ultra-low Qg x RDS(ON) figure-of-merit * High power and current handling capability Applications * Battery management * Load switch * Battery protection D D S S S D S S S Pin 1 S G S G Q2 G Q1 D Q2 S D S D Pin 1 D G Bottom Top TA=25oC unless otherwise noted Absolute Maximum Ratings VDSS VGSS ID Symbol PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) - Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Parameter 20 12 9.6 20 2.1 -55 to +150 Ratings Thermal Characteristics RJA RJB RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) 60 6.3 0.6 Package Marking and Ordering Information Device Marking 2553N Device FDZ2553N Reel Size 7'' Tape width 12mm (c)2003 Fairchild Semiconductor Corporation S Q1 S Units V V A W C C/W Quantity 3000 units FDZ2553N Rev D2 (W) FDZ2553N Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr TA = 25 unless otherwise noted C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = -12 V, VGS = 0 V VDS = 0 V VDS = 0 V Min 20 Typ Max Units V mV/C 1 100 -100 A nA nA V mV/C m A S pF pF pF 18 20 46 20 17 ns ns ns ns nC nC nC 1.7 1.2 A V nS nC Off Characteristics 14 On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 9.6 A VGS = 2.5 V, ID = 7.9 A VGS = 4.5 V, ID = 9.6 A, TJ=125C VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 9.6 A VDS = 10 V, f = 1.0 MHz V GS = 0 V, 0.6 0.9 -3 11 15 15 1.5 14 20 20 10 45 1299 317 166 Dynamic Characteristics Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 9.0 11 29 11 VDS = 10 V, VGS = 4.5 V ID = 9.6 A, 12 2.3 3.2 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.7 A Voltage Diode Reverse Recovery Time IF = 9.6A, diF/dt = 100 A/s Diode Reverse Recovery Charge (Note 2) 0.7 21 13 Notes: 1. RJA is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to copper chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user' board design. s (a). RJA = 60 C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b). RJA = 108 C/W when mounted on a minimum pad of 2 oz copper the circuit board side of the solder ball, RJB, is defined for reference. For RJC, the thermal reference point for the case is defined as the top surface of the 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDZ2553N Rev D2 (W) FDZ2553N Dimensional Outline and Pad Layout FDZ2553N Rev D2 (W) FDZ2553N Typical Characteristics 40 3.5V ID, DRAIN CURRENT (A) 30 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=4.5V 1.6 3.0V 2.5V 2.0V VGS = 2.5V 1.4 20 1.2 3.0V 3.5V 4.0V 10 1 4.5V 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 10 20 ID, DRAIN CURRENT (A) 30 40 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.045 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 9.6A VGS = 4.5V ID = 4.8 A 0.035 1.4 1.2 0.025 TA = 125oC TA = 25oC 1 0.8 0.015 0.6 -50 -25 0 25 50 75 100 o 0.005 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 40 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V VDS = 5V ID, DRAIN CURRENT (A) 30 TA = -55oC o 25oC 125 C 10 1 0.1 0.01 0.001 0.0001 TA = 125oC 25oC -55oC 20 10 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ2553N Rev D2 (W) FDZ2553N Typical Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) 2000 ID = 9.6A VDS = 5V 10V 4 f = 1MHz VGS = 0 V CAPACITANCE (pF) 1500 CISS 1000 COSS 15V 3 2 1 500 CRSS 0 0 2 4 6 8 10 12 14 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 1ms 10ms 100ms 1 VGS = 4.5V SINGLE PULSE RJA = 108oC/W TA = 25oC 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 1s 10s DC P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 50 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 40 SINGLE PULSE RJA = 108 C/W TA = 25 C 30 20 0.1 10 0 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 RJA(t) = r(t) * RJA RJA = 108 C/W P(pk) t1 t2 0.01 0.01 SINGLE PULSE TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ2553N Rev D2 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I2 |
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